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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *High Power Dissipation *High Switching Speed *Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as: *Switching regulators *Inverters *Solenoid and relay drivers *Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2N6674 VCBO Collector-Base Voltage VALUE 450 650 300 400 450 650 7 15 5.0 6 W Collector Power Dissipation@TC=25 TJ Tstg Junction Temperature Storage Temperature 175 200 -65~200 V A A 2N6674/6675 UNIT 2N6675 VCEO Collector-Emitter Voltage VCEX Collector-Emitter Voltage w w 2N6674 2N6675 2N6674 2N6675 scs .i w V .cn mi e V VEBO IC IB Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Ta=25 PC THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER 2N6674 V(BR)CEO Collector-Emitter Breakdown Voltage 2N6675 VCE(sat)-1 VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 2N6674 ICEX Collector Cutoff Current 2N6675 2N6674 ICBO Collector Cutoff Current IC= 10A; IB= 2A IC= 15A; IB= 5A IC= 10A; IB= 2A VCE= 450V; VBE= -1.5V VCE= 650V; VBE= -1.5V IC= 200mA ; IB= 0 CONDITIONS 2N6674/6675 MIN 300 MAX UNIT V 400 1.0 5.0 1.5 V V V IEBO hFE-1 hFE-2 COB Emitter Cutoff Current DC Current Gain DC Current Gain ww w 2N6675 scs .i VEB= 7V; IC= 0 VCB= 450V; IE= 0 VCB= 650V; IE= 0 .cn mi e 15 8 0.1 mA 0.1 1.0 mA 1.0 2.0 40 20 500 pF mA IC= 1A ; VCE= 3V IC= 10A ; VCE= 2V IE= 0; VCB= 10V; ftest= 1MHz Output Capacitance isc Websitewww.iscsemi.cn 2 |
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